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| STP55NF06L - STP55NF06LFP STB55NF06L - STB55NF06L-1 N-CHANNEL 60V - 0.014 - 55A TO-220/FP/D2PAK/I2PAK STripFETTMII POWER MOSFET TYPE STP55NF06L STP55NF06LFP STB55NF06L STB55NF06L-1 s s s VDSS 60 V 60 V 60 V 60 V RDS(on) <0.018 <0.018 <0.018 <0.018 ID 55 55 55 55 A A A A 3 1 2 1 3 2 TYPICAL RDS(on) = 0.014 EXCEPTIONAL dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220 TO-220FP 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Parameter 1 D2PAK 3 12 I2PAK INTERNAL SCHEMATIC DIAGRAM Value STP55NF06L STB55NF06L/-1 STP55NF06LFP 60 60 16 55 39 220 95 0.63 20 300 - 55 to 175 2500 30 21 120 30 0.2 Unit VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (2) EAS (1) VISO Tstg Tj August 2002 Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature V V V A A A W W/C V/ns mJ V C (q) Pulse width limited by safe operating area (1) Starting T j=25C, ID=27.5A, VDD=30V (2) I SD 55 A, di/dt 200A/s, V DD V(BR)DSS, Tj TJMAX. 1/12 STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1 THERMAL DATA TO-220 D2PAK I2PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.58 62.5 300 TO-220FP 5.0 C/W C/W C ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 16 V Min. 60 1 10 100 Typ. Max. Unit V A A nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250 A VGS = 5 V, ID = 27.5 A VGS = 10V, ID = 27.5 A Min. 1 Typ. 1.7 0.016 0.014 0.020 0.018 Max. Unit V DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15V , ID = 27.5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 30 1700 300 105 Max. Unit S pF pF pF 2/12 STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgs Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 30 V, ID = 27.5A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 48 V, ID = 55 A, VGS = 4.5V Min. Typ. 20 100 27 7 10 37 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions VDD = 30 V, ID = 27.5 A, RG = 4.7, VGS = 4.5V (see test circuit, Figure 5) Min. Typ. 40 20 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 55 A, VGS = 0 ISD = 55A, di/dt = 100A/s, VDD = 30 V, Tj = 150C (see test circuit, Figure 5) 80 200 5 Test Conditions Min. Typ. Max. 55 220 1.3 Unit A A V ns nC A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area For TO-220/D2PAK/I2PAK ThermalImpedanceforTO-220/D2PAK/I2PAK 3/12 STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1 Safe Operating Area For TO-220FP Thermal Impedance For TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/12 STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1 Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/12 STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/12 STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1 TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 A C D1 L2 D F1 G1 E Dia. L5 L7 L6 L4 P011C L9 F2 F G H2 7/12 STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1 TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 8/12 G STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1 D2PAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 9/12 1 STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1 TO-262 (I2PAK) MECHANICAL DATA mm MIN. A A1 B B2 C C2 D e E L L1 L2 4.4 2.49 0.7 1.14 0.45 1.23 8.95 2.4 10 13.1 3.48 1.27 TYP. MAX. 4.6 2.69 0.93 1.7 0.6 1.36 9.35 2.7 10.4 13.6 3.78 1.4 MIN. 0.173 0.098 0.027 0.044 0.017 0.048 0.352 0.094 0.393 0.515 0.137 0.050 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.106 0.409 0.531 0.149 0.055 DIM. A C2 B2 B E L1 L2 D L P011P5/E 10/12 e A1 C STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1 D PAK FOOTPRINT 2 TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 11/12 STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 12/12 |
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